MIL-HDBK-217F(N2)-美国军标-电子设备可靠性预计手册.pdf

NOTICEOF CHANGE NOTMEASUREMENT SENSITIVE 1 ke THIS HANDBOOK IS FOR GUIDANCE ONLY - MIL-HDBK-217F DO NOT CITE THIS DOCUMENT AS A REQUIREMENT NOTICE 2 28 February 1995 To all holders of MILITARYHANDBOOK RELIABILITY PREDICTION OF ELECTRONIC MIL-HDBK-217F EQUIPMENT 1.The following pagesofMIL-HDBK-217Fhave been revisedand supersede the pagea Med. . New Page1“Date supersededPage6Date r Front Cover Front Cover2 December 1991 ... Ml[2 December 199I ... 11Reprinted without charme r iv iv2 Deoember 1991 \ v vI 2 December 1991 vi viI 2 Deoember 1991 A vii1viiI10 Julv 1992 .,. VlllNewPage I 1-1 1-12 Deoember 1991 L 1 1-2 New Page 2-1 2“112 December 1991 1 4 2-2 2-22 Deoember 1991 1 2-3 2-3.2 Deoember 1991 I 1 2-41 2-4I 2 Daoember 1991 1 2-5 2-512 December 1991 , 2-6 2-612 Deoember 1991 I 9.7New Paae 2-8I New Page r 5“3 5-310 Ju 1992 5410 July 1992 5-4Reprinted without change I 5-5 5-52 December 1991 I 5-65-6 2 IxoWnber1991 4 5-95-9 10 Judlstnbutlonunlimited. ----1 11 1 , I-r____ INOT MEASUREMENTSENSITIVE] MIL-HDBK-217F 2 DECEMBER1991 SUPERSEDING MIL-HDBK-217E, Notice 1 2 January1990 MILITARYHANDBOOK RELIABILITYPREDICTIONOF ELECTRONICEQUIPMENT THIS HANDBOOK IS FOR GUIDANCE ONLY -DONOT CITE THIS DOCUMENT AS A REQUIREMENT AMSCNIA DISTRIBUTIONSTATEMENTAd Approvedfor publlcrelease;drstrlbulcntinllmtted FSC-RELI ._ - MIL-HDBK-217F DEPARTMENTOFDEFENSE WASHINGTONDC20301 RELIABILITYPREDICTIONOF ELECTRONICEQUIPMENT 1,Thisstandardizationhandbookwasdevelopedby theDepartmentof Defense with the assistanceof the militarydepartments,federalagencies,and industry. 2.Everyefforthasbeenmadetoreflectthelatestinationonreliability predictionprocedures.It is theintenttoreviewthishandbookperiodicallyto ensureits completenessandcurrency. 3.Beneficialcommentsrecommendations,additions,deletionsandany pertinentdatawhichmaybeofusein improvingthisdocumentshouldbe addressedtoRomeLaboratoERSR,AttmSeymourF. Morris,525Brooks Rd.,GriffissAFB,NY13441-4505,byusingtheself-addressed StandardizationDocumentImprovementProposalDD1426appearing at the end of this documentor by letter. II ,...-..- .. -..., -.-- _____ ...--. .. -----al..-A--I-*AA-*..A;a- MIL-HDBK-217F TA8LEOFCONTENTS SECTION 1.1 1.2 1.3 SECTION SECTION 3.1 3.2 3.3 3.4 SECTION SECTION 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 SECTION 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 6,14 6.15 1SCOPE Purpose................................................................................................................. Application............................................................................................................. ComputerizedReliabilityPrediction......................................................................... 2REFERENCEDOCUMENTS....................................................................... 3INTRODUCTION ReliabilityEngineering............................................................................................ TheRoleof ReliabilityPrediction.............................................................................. Limitationsof ReliabilityPredictions.......................................................................... Part Stress Analysis Prediction ................................................................................ 4RELIABILITYANALYSISUATION................................................... 5MICROCIRCUITS,INTRODUCTIONG.......................................................... Gate/LogicArraysandMicroprocessors.................................................................... Memories..........................................0..... ............................................................... VHSIC/VHSICLike .................................................................................................. GaAs MMIC and Digital Devices ................................................................................ Hybrids.................................................................................................................. SAW Devices......................................................................................................... MagneticBubbleMemories..................................................................................... XT Tablefor All ........................................................................0..................,*.**...... ., C2 Table forAll ....................................................................................................... XE, and ZQ Tables for All .............G................................................*.**................0. TJ Determination,All Except Hybrids ......................*.*...G............................G...*.....*,. TJ Determination,For Hybrids ......................................................................G.*....... Examples ............................................................................................................... 6DISCRETESEMICONDUCTORS DiscreteSemiconductors,Introduction........................................................00.......... Diodes,LowFrequency........................................................................................., Diodes,High FrequencyMicrowave,RF ................................................................. Transistors,Low Frequency,Bipolar........................................................................ Transistors,LowFrequency,Si FET ........................................0................................ Transistors,Unijunction........................................................................................... Transistors,Low Noise, High Frequency,Bipolar..............GO.*......**.*.......................... Transistors,HighPower,HighFrequency,Bipolar .......0..... ........................................ Transistors,HighFrequmcy,GaAsFET ............. . . . . . . ...0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transistors, High Frequency, Si FETG........................... . . . . . . . . . . . . .G. . . . . . . . . . . . .G. . . . . . . . . . . . . . . . Thyristors and SCRS.....................**.......................... . . . . . ...0.... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Optoelectronics,Detectors,Isolators,Emitters............................. . . . . ..*...... ,,.,. 0......,,, Optoelectronics,Alphanumeric Displays .........0..................G. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Optoelectronics,LaserDiode .................................................................................. TJ Determination.................................................................................................... Example................................................................................................................. 1-1 1-1 1-1 2-1 3-1 3-1 3-2 3-2 4-1 5-1 5-3 5-4 5-7 5-8 5-9 5-1o 5-11 5“13 5-14 5-15 5-17 5-18 5-20 6-1 6-2 6-4 6-6 6-8 6-9 6-10 6-12 6-14 6-16 6-17 6-19 6-20 6-21 6-23 6-25 ... Ill mmTI 1 MIL-HD8K-217F NOTICE2 TABLEOFCONTENTS sECTION 7.1 7.2 7.3 SECTlON 8.0 8.1 8.2 8.3 8.4 sECTION 9.1 sECTION 10.1 10.2 sECTIO 11.1 11.2 11.3 sECTlol 12.1 12.2 12.3 sECTIO 13.1 13.2 sECTlc 14.1 14.2 SECTI 15.1 15.2 sECTl 16.’ 16. SECTI 17. SECT 18. SECT 19 7 TUBEs All TypesExceptWTand Magnetron .................................................................... TravelingWave ....................................................................................................... Magnetron ............................................................................ ................................ 8 LASERs introduction ........................................................................................................... Heliumand Argon ............................................................................” ........” .......”” ... CarbonDioxide,Sealed ......................................................................................... CarbonDioxide,Flowing ....................................................................................... SolidState,NDYAGandRubyRod ...................................................................... 9 RESISToRs Resistors..................................................................................”.........o. .....-..”..”G“” 10 CAPACITORS Capacitors ................................................................................*.... ......0...”. ..........”. Capacitors,Example ............................................................................” ................. 11 INDUCTIVEDEVICES Transers ......................................................................................................... Colh,..............................................................................................................”” .... Determinationof l-lot SpotTemperature ..........................................................”.. ... 12 ROTATINGDEVICES Motors.................................................................................*.* ........”... ................”. Synchros and Resolvem .......................................................”......*....”.”.........””.””.*.* Elapsed limeMeters ............................................G................................................ 13 RELAys Mechanical ..........................................................................................0..... ............. Solid State and TimeDelay ..................................................................................... 7-1 7-3 7-4 8-1 8-2 8-3 8-4 8-5 9-1 10-1 10-6 11-1 11-3 11-4 12-1 12-4 12-5 13-1 13-3 N N ON I ON 1 ION 1 ION .1 14 SWITCHEs 14-1 Sw[tche. .. .. ................ ............. .... ........ ........... .... .................. ...*.”......o.”..”..... ....... ... CircuitBreakers 14-2 ......................................0..,,..,.. ...........” ...........” .........””” .........””. ..... 15 CONNECTORS Connectors,General 15-1 .......................................................................”...........” .......... Connectors,Sockets 15-3 ............................................................*....” ...*...**”*..*..*.*.*. ..... 16 INTERCONNECTIONASSEMBLIES InterconnectionAssemblieswithPlatedThroughHoles 16-1 .......................................... 16-2 InterconnectionAssemblies,SuflaceMountTechnology ......................................... 17 CONNECTIONS 17-1 Connections .............................................................................. . ..0....... . . . . . . . . . . . . . . . . . 18 METERS 18-1 Meters,Panel....................................... ................................................................. . 19 QUARTZCRYSTALS 19-1 QuartzCsta\s ...................................................................................................... Iv Supersedespagew of RevtslonF --I--1.-------- -----nl-l--l ,--,..*..T”c, MIL-HDBK-217F NOTICE2 TABLEOFCONTENTS SECTION 20.1 SECTION 21.1 SECTION 22.1 SECTION 23.1 20 LAMPS Lamps ................................................................................................................... 20-1 21ELECTRONICFILTERS ElectronicFilters,Non-Tunable ................................................................................ 21-1 22FUSES Fuses................................................................................................................... 22-1 23MISCELLANEOUSPARTS MiscellaneousParts ................................................................................................ 23-1 APPENDIXA PARTSCOUNTRELIABILITYPREDICTION .....................*.. ........*... ...... A-1 APPENDIXB VHSIC/VHSICOLIKEANDVLSICMOSDETAILEDMODEL..............B-1 APPENDIXC BIBLIOGRAPHY ......................................................................................... c-1 Table3-1 Table 3-2 Table4-1 Table 6-1 Table6-2 Figure5-1 Figure8-1 LISTOFTABLES PartswithMuti-LevelQualitySpecifications ........................................................ 3-3 EnvironmentalSymboland Description ........................................*..................... 3-4 Reliability Analysis Checklist ............................................................................. 4-1 Defautt Case Temperaturesfor All EnvironmentsC .......................................... 6-23 ApproximateThermalResistancefor SemicondorDevices inVarious Pa*Sk .......*.*.......**......*...................*...*..*........................... 6-24 LISTOFFIGURES Cross SectionalView of a Hybrid with a Single Multi-LayeredSubstrate................ 5-18 Examplesof Active OpticalSuffaces .................................................................. 8-1 Supersedespage v of RevisionF V ,... - IracincluclI VLRYIrlmllllulkIIWUIIIICIIIICLILI M L-HDBK-217F NOTICE2 FOREWORD 1.0THISHANDBOOKISFORGUIDANCEONLY. THISHANDBOOKSHALL NOTBECITEDASAREQUIREMENT. IFITIS,THECONTRACTORDOESNOT HAVETOCOMPLY. MIL-HDBK-217F,Notice2providesthefollowingchangesbasedupon a recentlycompleted studysee Ref. 37 listedin AppendixC b Revisedresistorand capacitormodels,includingnew modelsto addresschip devices. G Updatedfailureratemodelsfor transers,coils,motors,relays,switches,circuitbreakers, connectors,printedcircuitboardswithandwithoutsurfacemounttechnologyand connections. .A new modelto addresssurfacemountedtechnologysolderconnections. .A revisedTravelingWaveTubemodelbasedupondatasuppliedby the ElectronicIndustries AssociationMicrowaveTubeDivision.Thisfurtherlowersthe calculatedfailureratesbeyond the earliermodificationsmadein the basedocumentMIL-HDBK-217F,2 December1991. G RevisedtheFastRecovePowerRectifierbasefailureratedownwardbasedona reuationof Ref.28. 2.0MIL-HDBK-217F,Notice1, 10July1992wasissuedtocorrectminortypographical errorsin the basicF Revision. 3.0MIL-tiDBK-217F,basedocument,2December1991providedthefollowing changes based upon recently completed studies see Ref. 30 and 32 listed in Appendix C 1.New failure rate prediction models are provided forthefollowingninemajorclassesof microcircuits G G G G G G G 9 G Monolithic Monolithic Monolithic including Monolithic Monolithic Monolithic BipolarDigitalandLinearGate/LogicArrayDevices MOSDigitalandLinearGate/LogicArrayDevices BipolarandMOSDigitalMicroprocessorDevices Controllers Bipolar and MOS MemoryDevices GaAsDigitalDevices GaAsMMICDevices HybridMicrocircuits MagneticBubble SurfaceAcoustic The2 December1991 microcircuitswithgate transistors,bipolarand Memories Wave Devices revisionprovidednewpredictionmodelsforbipolarandMOS countsupto60,000,linearmicrocircuitswithupto3000 MOSdigitalmicroprocessorandco-processorsupto32bits, memorydeviceswithup to1 millionbits,GaAsmonolithicmicrowaveintegratedcircuits MMICSwithupto1,000activeelements,andGaAsdigitalICSwithupto10,000 transistors. TheC,factorshavebeenextensivelyrevisedtoreflectne